SELECTIVELY-DOPED AL_0.48IN_0.52AS/GA_0.47IN_0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

GA_0.47IN_0.53AS/AL_0.48IN_0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

ION-IMPLANTED IN⁰,53)GA⁰,47)AS/IN⁰,48)AS LATERAL PNP TRANSISTORSTABATABAIE ALAVI K; CHOUDHURY ANMM; ALAVI K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 379-381; BIBL. 12 REF.Article

CURRENT TRANSPORT IN AL/INALAS/INGAAS HETEROSTRUCTURESMORGAN DV; BOARD K; WOOD CEC et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 251-260; ABS. GER; BIBL. 5 REF.Article

MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR BEAM EPITAXIAL GROWN IN_0.52AL_0.48AS/IN_0.53GA_0.47AS, N-N HETEROJUNCTION BY C-V PROFILINGPEOPLE R; WECHT KW; ALAVI K et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 1; PP. 118-120; BIBL. 10 REF.Article

AL₀₄₈IN₀₅₂AS/GA₀₄₇IN₀₅₃AS/AL₀₄₈IN₀₅₂ AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65 MU MTSANG WT.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3861-3864; BIBL. 16 REF.Article

CURRENT TRANSPORT IN MODULATION-DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJONCTIONS AT MODERATE ELECTRIC FIELDSDRUMMOND TJ; MORKOC H; CHENG KY et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3654-3657; BIBL. 14 REF.Article

MOLECULAR-BEAM EPITAXIAL GROWTH OF UNIFORM GA₀₄₇IN₀₅₃AS WITH A ROTATING SAMPLE HOLDERCHENG KY; CHO AY; WAGNER WR et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 8; PP. 607-609; BIBL. 5 REF.Article

DEPLETION MODE MODULATION DOPED AL_0.48IN_0.52AS-GA_0.47IN_0.53 AS HETEROJUNCTION FIELD EFFECT TRANSISTORSCHEN CY; CHO AY; CHENG KY et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 6; PP. 152-155; BIBL. 22 REF.Article

DEPENDENCE OF ELECTRON MOBILITY ON SPACER THICKNESS AND ELECTRON DENSITY IN MODULATION-DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJUNCTIONSHSIEH KH; OHNO H; WICKS G et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 5; PP. 160-162; BIBL. 10 REF.Article

ELECTRON MOBILITIES IN MODULATION DOPED GA_0.47IN_0.53AS/AL_0.48IN_0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR BEAM EPITAXYCHENG KY; CHO AY; DRUMMOND TJ et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 147-149; BIBL. 13 REF.Article

SHORT CHANNEL GA_0.47IN_0.53AS/AL_0.48IN_0.52AS SELECTIVELY DOPED FIELD EFFECT TRANSISTORSCHEN CY; CHO AY; ALAVI K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 8; PP. 205-208; BIBL. 13 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF LATTICE-MATCHED AL_0.48IN_0.52AS ON INPNAKAJIMA K; TANAHASHI T; AKITA K et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 2; PP. 194-196; BIBL. 8 REF.Article

SILICON DOPING AND IMPURITY PROFILES IN GA_0.47IN_0.53AS AND AL_0.48IN_0.52AS GROWN BY MOLECULAR BEAM EPITAXYCHENG KY; CHO AY.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4411-4415; BIBL. 25 REF.Article

OPTICALLY PUMPED 1,55-MU M DOUBLE HETEROSTRUCTURE GA_XALYIN_1-X-Y AS/AL_UIN_1-UAS LASERS GROWN BY MOLECULAR BEAM EPITAXYALAVI K; TEMKIN H; WAGNER WR et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 254-256; BIBL. 10 REF.Article

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In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As abrupt double-heterojunction bipolar transistorsWAI LEE; FONSTAD, C. G.IEEE electron device letters. 1986, Vol 7, Num 12, pp 683-685, issn 0741-3106Article

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